News · Semiconductors & Defense

Navitas Wins U.S. Army Award to Develop 10 kV Silicon-Carbide Power Devices

Navitas Semiconductor won the U.S. Army's ALATTIS program to develop 10 kV silicon-carbide IGBTs and a domestic manufacturing process, extending its GeneSiC portfolio beyond its current 650 V to 6.5 kV range.

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Navitas Semiconductor ($NVTS) has been awarded the ALATTIS program by the U.S. Army to develop next-generation 10 kV silicon-carbide power semiconductors and a domestic manufacturing process for them.

Sponsor: the Army Research Laboratory (ARL), part of DEVCOM, sponsors the project. It's supported by the Joint Experimentation and Technology Accelerator (JETX).

Device focus: the program targets 10 kV silicon-carbide IGBTs and associated PiN diode technologies for mission-critical systems used by the Armed Forces.

Manufacturing goal: the prototype project aims to develop, execute, and validate a domestic manufacturing process for silicon-carbide devices rated 10 kV or higher, which Navitas describes as currently unavailable.

Existing portfolio: Navitas' GeneSiC line, built on its patented trench-assisted planar (TAP) architecture, currently spans 650 V to 6.5 kV. The company says the Army selected it from among leading U.S. silicon-carbide firms after a competitive evaluation.

"This program enables Navitas to extend its leadership beyond SiC MOSFETs by developing next-generation 10 kV SiC IGBTs built on our unique, patented trench-assisted planar (TAP) architecture and integrated with advanced PiN diode technologies," said Siddarth Sundaresan, SVP and Chief Technology Officer at Navitas.

Context. Navitas points to a track record in ultra-high-voltage SiC, including 6.5 kV SiC thyristors in 2010 and 10–15 kV PiN diodes in 2012. The award was announced Monday.

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